Advanced Physical Research

Advanced Physical Research

ISSN Print: 2663-8436
ISSN Online: 3105-3548

Advanced Physical Research is an open access Journal, publishing fully peer-reviewed original and review papers as well as brief reports on topics in all areas of theoretical and applied physics. The journal provides a platform for researchers who wish to summarize a field of physics research and share this work as widely as possible. The published papers provide an overview of the main developments on a particular topic, with an emphasis on recent developments, and sketch an outlook on future developments.

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Abstract

Chemical substitution offers a powerful route for engineering electronic phases in two-dimensional (2D) van der Waals materials, particularly in systems where structural distortions and ligand-field asymmetry strongly influence electronic behavior. In this work, we perform a comprehensive first-principles investigation of pristine and Fe-substituted monolayer CrPSe3 to elucidate the structural and electronic mechanisms that drive its semiconductor-to-metal transition. The optimized pristine structure reproduces experimentally reported bond lengths and angular distortions, confirming the reliability of our computational baseline. Fe incorporation induces pronounced anisotropic lattice relaxation, including a substantial reduction in the monoclinic angular disparity of the honeycomb network and significant reorganization of metal–chalcogen bonding. Charge-state analysis shows that Fe donates considerably fewer electrons to Se than Cr, enhancing Fe–Se covalency and shifting Fe 3d states into the narrow band gap of pristine CrPSe3. These structural and chemical perturbations collectively increase p–d hybridization, broaden frontier bands, and generate a metallic electronic structure characterized by hybrid Fe/Cr t2g states crossing the Fermi level. The results establish a coherent mechanistic framework linking lattice symmetry, bonding character, and orbital hierarchy, and demonstrate that the transition-metal substitution provides an effective pathway for tuning electronic phases in MPX3 monolayers.



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