Advanced Physical Research

ISSN Print: 2663-8436

ISSN Online: 3105-3548

Advanced Physical Research is an open access Journal, publishing fully peer-reviewed original and review papers as well as brief reports on topics in all areas of theoretical and applied physics. The journal provides a platform for researchers who wish to summarize a field of physics research and share this work as widely as possible. The published papers provide an overview of the main developments on a particular topic, with an emphasis on recent developments, and sketch an outlook on future developments.

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Defect Formation Processes in Silicon with Impurities of Thulium and Terbium

Published: 12-10-2026

https://doi.org/10.62476/apr83455

Abstract

The influence of rare-earth elements (Tb, Tm) on the electrophysical and structural properties of single-crystal silicon was investigated. Silicon samples of the KEF-40, KEF-7.5, and KDB-20 grades were subjected to diffusion annealing at 1250 °C followed by rapid cooling. Neutron activation analysis confirmed impurity incorporation at the level of ~10¹⁶–10¹⁷ atoms/cm³. Doping was shown to cause changes in electrical resistivity and charge carrier concentration. Fourier-transform infrared spectroscopy revealed a decrease in the content of optically active oxygen. Raman spectroscopy showed a change in the main silicon phonon mode (~523 ) and the appearance of an additional line at approximately 245 . The obtained results indicate the possibility of modifying the properties of silicon by doping with rare-earth elements.