Advanced Physical Research

The Raman scattering on electronic excitations in Hg_1-xMn_xTe semimagnetic semiconductors (SMS) with inverted band structure is considered in the strong classical magnetic field. The differential cross section (DCS) of the interband Raman scattering is calculated. Since, in the general case, it has a cumbersome form, we present the expression of the DCS only for ZZ geometry. It is shown that DCS depends on the exchange parameters and concentration of magnetic ions. It is found that the resonant peak in the zero magnetic field is split on four lines in then on zero magnetic field. This allows us to determine the values of the exchange parameters Nα and Nβ and, consequently, the ratio of these parameters from the values of the resonance frequencies. With the help of obtained formula it is possible to carry out comparative analysis of the magnetic ion concentrations, i.e., the positions of the resonance emission lines can be used to compare different samples and sort them by increasing ion concentrations. Even if one of the parameters are unknown, it is sufficient to record the resonance lines at two values of the magnetic field in order to determine the magnetic ion concentration.