Advanced Physical Research

The necessary information on the formation of high manganese silicide (Mn₄Si₇) coating by magnetron sputtering method is presented in this work. The technology and basic modes of creating the necessary targets for a magnetron sputtering device are presented. Targets were created by adding silicon and manganese powders in the required amount and heating them under vacuum conditions at high temperature and pressure. Thin silicide films (thin coatings) of different thicknesses were formed on the surface of silicon dioxide from the produced targets using the method of magnetron sputtering. The electrophysical and thermoelectric properties of the produced films were studied using physical and optical methods. Due to the change in the structure of the coatings during subsequent heat treatment, the Seebeck coefficient noticeably increases. The composition and structure of vacuum coatings with a thickness of about 100-150 nm depend on the parameters of their formation, as well as subsequent treatments. Due to the change in the structure of the coatings during subsequent heat treatment, the Seebeck coefficient noticeably increases.