Advanced Physical Research

ISSN Print: 2663-8436

ISSN Online: 3105-3548

Advanced Physical Research is an open access Journal, publishing fully peer-reviewed original and review papers as well as brief reports on topics in all areas of theoretical and applied physics. The journal provides a platform for researchers who wish to summarize a field of physics research and share this work as widely as possible. The published papers provide an overview of the main developments on a particular topic, with an emphasis on recent developments, and sketch an outlook on future developments.

Submission Current Issue Archive Editorial Board

Influence of Gamma Rays on Electrophysical Properties of Silicon Doped with Palladium Atoms

Published: 16-10-2025

https://doi.org/10.62476/apr.73166

Abstract

In this paper, we study the effect of gamma radiation (dose 107 rad) on the electrophysical properties of single crystals of n-type silicon (n-Si) doped with palladium atoms at different temperatures using the impedance spectroscopy method. It is determined that the electrical resistance of the original silicon will sharply increase several times as a result of irradiation due to the creation of radiation defects. In samples doped with Pd, γ-irradiation, on the contrary, reduces the resistance. This may be due to the destruction of existing traps, their transition to a neutral state or a shift in energy levels, reducing their activity. Using an electron microscope, the elemental composition was determined and micrographs were obtained on the surface of the original doped silicon samples.