Solid Solutions in Cu2Se - Ga2Se - In2Se3 Nanothick Films
The physical properties of functional materials are formed depending on their electronic and crystalline structure. Therefore, it is important to study the structural properties of these materials. By electron diffraction method the processes of phase formation and phase transitions in Cu2Se – Ga2Se – In2Se3 system thin films have been investigated. By kinematic electron diffraction method it is established that as a result of polycrystalline α – β transformation of CuIn5Se8 composition ternary compound has been taken place. There have been revealed the formation conditions and phase equilibrium distributed on condensation plane of phases in the form of CuGa5(In5)Se8 ternary compounds and CuGa5(In1-xGax)Se8 composition solid solutions with different ratio of components.